제조업체 | 부품명 | 데이터시트 | 상세설명 |
NXP Semiconductors |
PHB191NQ06LT
|
91Kb / 13P |
Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology
Rev. 01-05 May 2004 |
PH1955L
|
77Kb / 12P |
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
Rev. 01-15 August 2005 |
ZP Semiconductor |
PMV30UN
|
200Kb / 3P |
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS??technology.
|
NXP Semiconductors |
2N7002F215
|
100Kb / 12P |
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
Rev. 03-28 April 2006 |
BUK7520-55A
|
318Kb / 15P |
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance.
Rev. 01-18 January 2001 |
BUK9615-100A
|
70Kb / 9P |
N-Channel Enhancement mode logic Level field-Effect power Transistor
November 1999-Rev 1.000 |
PHN1015
|
95Kb / 7P |
N-channel TrenchMOS transistor Logic level
December 1999 Rev 1.300 |
Nexperia B.V. All right... |
PSMN011-60HL
|
280Kb / 12P |
N-channel 60 V, 11.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology
30 September 2022 |
PSMN8R0-40HL
|
345Kb / 12P |
N-channel 40 V, 9.4 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology
30 September 2022 |
PSMN6R1-40HL
|
340Kb / 12P |
N-channel 40 V, 7.2 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology
30 September 2022 |