General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features
• –8.8 A, –30 V.
   RDS(ON) = 20 mΩ @ VGS = –10 V
   RDS(ON) = 35 mΩ @ VGS = – 4.5 V
• Extended VGSS range (–25V) for battery applications
• HBM ESD protection level of ±4.5 kV typical (note 3)
• High performance trench technology for extremely
   low RDS(ON)
• High power and current handling capability
• Termination is Lead-free and RoHS compliant