Description

This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.

Features

Advanced Process Technology


Key Parameters Optimized for Class-D Audio Amplifier Applications

Low RDSON for Improved Efficiency

Low Qg and Qsw for Better THD and Improved Efficiency

Low Qrr for Better THD and Lower EMI

175°C Operating Junction Temperature for Ruggedness

Repetitive Avalanche Capability for Robustness and Reliability

Multiple Package Options

Lead-Free