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SST28SF040A-120-4C-PH 데이터시트 (PDF) - Silicon Storage Technology, Inc

SST28SF040A-120-4C-PH Datasheet PDF - Silicon Storage Technology, Inc
부품명 SST28SF040A-120-4C-PH
다운로드  SST28SF040A-120-4C-PH 다운로드

파일 크기   323.43 Kbytes
페이지   24 Pages
제조업체  SST [Silicon Storage Technology, Inc]
홈페이지  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
상세설명 4 Mbit (512K x8) SuperFlash EEPROM

SST28SF040A-120-4C-PH Datasheet (PDF)

Go To PDF Page 다운로드 데이터시트
SST28SF040A-120-4C-PH Datasheet PDF - Silicon Storage Technology, Inc

부품명 SST28SF040A-120-4C-PH
다운로드  SST28SF040A-120-4C-PH Click to download

파일 크기   323.43 Kbytes
페이지   24 Pages
제조업체  SST [Silicon Storage Technology, Inc]
홈페이지  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc
상세설명 4 Mbit (512K x8) SuperFlash EEPROM

SST28SF040A-120-4C-PH 데이터시트 (HTML) - Silicon Storage Technology, Inc

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SST28SF040A-120-4C-PH 제품 세부 정보

PRODUCT DESCRIPTION
The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternative approaches. The SST28SF/VF040A erase and program with a single power supply. The SST28SF/ VF040A conform to JEDEC standard pinouts for byte wide memories and are compatible with existing industry standard flash EEPROM pinouts.
Featuring high performance programming, the SST28SF/VF040A typically Byte-Program in 35 µs. The SST28SF/VF040A typically Sector-Erase in 2 ms. Both Program and Erase times can be optimized using interface features such as Toggle bit or Data# Polling to indicate the completion of the Write cycle. To protect against an inadvertent write, the SST28SF/VF040A have on chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST28SF/VF040A are offered with a guaranteed sector endurance of 10,000 cycles. Data retention is rated greater than 100 years.

FEATURES:
• Single Voltage Read and Write Operations
   – 5.0V-only for SST28SF040A
   – 2.7-3.6V for SST28VF040A
• Superior Reliability
   – Endurance: 100,000 Cycles (typical)
   – Greater than 100 years Data Retention
• Memory Organization: 512K x8
• Sector-Erase Capability: 256 Bytes per Sector
• Low Power Consumption
   – Active Current: 15 mA (typical) for 5.0V and
      10 mA (typical) for 2.7-3.6V
   – Standby Current: 5 µA (typical)
• Fast Sector-Erase/Byte-Program Operation
   – Byte-Program Time: 35 µs (typical)
   – Sector-Erase Time: 2 ms (typical)
   – Complete Memory Rewrite: 20 sec (typical)
• Fast Read Access Time
   – 5.0V-only operation: 90 and 120 ns
   – 2.7-3.6V operation: 150 and 200 ns
• Latched Address and Data
• Hardware and Software Data Protection
   – 7-Read-Cycle-Sequence Software Data
      Protection
• End-of-Write Detection
   – Toggle Bit
   – Data# Polling
• TTL I/O Compatibility
• JEDEC Standard
   – Flash EEPROM Pinouts
• Packages Available
   – 32-lead PLCC
   – 32-lead TSOP (8mm x 14mm and 8mm x 20mm)
   – 32-pin PDIP




유사한 부품 번호 - SST28SF040A-120-4C-PH

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Silicon Storage Technology, Inc 에 대하여


SST (Silicon Storage Technology, Inc.)는 플래시 메모리 및 마이크로 컨트롤러를 포함하여 비 휘발성 메모리 솔루션의 설계 및 제조를 전문으로하는 미국 기술 회사였습니다.
이 회사는 1991 년에 설립되었으며 캘리포니아 주 Sunnyvale에 본사를두고 있습니다.
SST는 혁신적인 기술과 고품질 제품으로 유명했으며 메모리 및 스토리지 산업에서 강력한 명성을 얻었습니다.
2010 년 SST는 마이크로 컨트롤러 및 아날로그 반도체의 주요 제공 업체 인 Microchip Technology Inc.에서 인수했습니다.
오늘날 SST는 Microchip의 자회사로 운영되며 다양한 응용 프로그램에 대한 비 휘발성 메모리 솔루션을 계속 제공하고 있습니다.

*이 정보는 일반적인 정보 제공의 목적으로만 제공되며 위 정보로 인해 발생하는 손실이나 손해에 대해 책임을 지지 않습니다.




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