제조업체 | 부품명 | 데이터시트 | 상세설명 |
Toshiba Semiconductor |
1SS384
|
212Kb / 3P |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
1SS395
|
193Kb / 3P |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
1SS405
|
214Kb / 3P |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
1SS424
|
149Kb / 3P |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
1SS383
|
283Kb / 3P |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
1SS385FV
|
238Kb / 3P |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
1SS389
|
212Kb / 3P |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
1SS396
|
326Kb / 3P |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
1SS357
|
213Kb / 3P |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
1SS372
|
223Kb / 3P |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
1SS385
|
265Kb / 3P |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|