제조업체 | 부품명 | 데이터시트 | 상세설명 |
NXP Semiconductors |
100B470JT500XT
|
427Kb/20P
|
Airfast RF Power LDMOS Transistor
Rev. 0-March 2021
|
Search Partnumber :
Start with "100B470JT" -
Total : 21 ( 1/2 Page) |
NXP Semiconductors |
100B470JT500XT
|
427Kb/20P |
Airfast RF Power LDMOS Transistor
Rev. 0-March 2021 |
Advanced Semiconductor |
100B470JP500X
|
1Mb/8P |
All Gold Bonding Scheme
|
100B470JP500X
|
2Mb/5P |
Silicon MOSFET Technology
|
Freescale Semiconductor... |
100B47JP500X
|
928Kb/20P |
N-Channel Enhancement-Mode Lateral MOSFETs
|
Vishay Siliconix |
100B4130130XXXX
|
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS
01-Jan-2022 |
100B4130222XXXX
|
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS
01-Jan-2022 |
100B4130470XXXX
|
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS
01-Jan-2022 |
100B4222130XXXX
|
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS
01-Jan-2022 |
100B4222222XXXX
|
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS
01-Jan-2022 |
100B4222470XXXX
|
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS
01-Jan-2022 |
Freescale Semiconductor... |
100B430JP500X
|
594Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers
|
NXP Semiconductors |
100B430JP500X
|
670Kb/16P |
RF LDMOS Wideband Integrated Power Amplifier
Rev. 4, 5/2006 |
100B430JT500XT
|
424Kb/12P |
RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET
Rev. 0, 02/2021 |
Vishay Siliconix |
100B4470130XXXX
|
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS
01-Jan-2022 |
100B4470222XXXX
|
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS
01-Jan-2022 |
100B4470470XXXX
|
343Kb/4P |
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS
01-Jan-2022 |
NXP Semiconductors |
100B4R3JT500XT
|
427Kb/20P |
Airfast RF Power LDMOS Transistor
Rev. 0-March 2021 |
Freescale Semiconductor... |
100B4R7CP500X
|
594Kb/16P |
RF LDMOS Wideband Integrated Power Amplifiers
|
NXP Semiconductors |
100B4R7CP500X
|
670Kb/16P |
RF LDMOS Wideband Integrated Power Amplifier
Rev. 4, 5/2006 |