| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
Fairchild Semiconductor |
10N120BND
|
110Kb/8P
|
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
|
Intersil Corporation |
10N120BND
|
82Kb/7P
|
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
January 2000
|
| Search Partnumber :
Start with "10N120BND" -
Total : 15 ( 1/1 Page) |
Intersil Corporation |
10N120BN
|
81Kb/7P |
35A, 1200V, NPT Series N-Channel IGBT
January 2000 |
Fairchild Semiconductor |
10N120BN
|
217Kb/8P |
35A, 1200V, NPT Series N-Channel IGBT
|
Inchange Semiconductor ... |
10N12-220
|
199Kb/2P |
isc N-Channel Mosfet Transistor
|
|
10N12-TO3
|
194Kb/2P |
N-Channel Mosfet Transistor
|
Infineon Technologies A... |
10N10
|
787Kb/8P |
SIPMOS Power-Transistor
2002-01-31 |
VBsemi Electronics Co.,... |
10N10ELG
|
1Mb/7P |
N-Channel 100 V (D-S) MOSFET
|
Unisonic Technologies |
10N15
|
281Kb/4P |
10A, 150V, 0.3廓, N-CHANNEL POWER MOSFETS
|
|
10N15G-TF1-T
|
221Kb/4P |
N-CHANNEL MOSFET ARRAY FOR SWITCHING
|
|
10N15G-TF1-T
|
281Kb/4P |
10A, 150V, 0.3廓, N-CHANNEL POWER MOSFETS
|
|
10N15G-TN3-T
|
221Kb/4P |
N-CHANNEL MOSFET ARRAY FOR SWITCHING
|
SHENZHEN DOINGTER SEMIC... |
10N15L-TA3-T
|
1Mb/7P |
N-Channel MOSFET uses advanced trench technology
|
Unisonic Technologies |
10N15L-TF1-T
|
281Kb/4P |
10A, 150V, 0.3廓, N-CHANNEL POWER MOSFETS
|
|
10N15L-TF1-T
|
221Kb/4P |
N-CHANNEL MOSFET ARRAY FOR SWITCHING
|
|
10N15L-TN3-T
|
221Kb/4P |
N-CHANNEL MOSFET ARRAY FOR SWITCHING
|
|
10N15
|
221Kb/4P |
N-CHANNEL MOSFET ARRAY FOR SWITCHING
|
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