| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
Toshiba Semiconductor |
1SS401
|
107Kb/2P
|
DIODE (HIGH SPEED SWITCHING APPLICATIONS)
|
|
1SS401
|
173Kb/3P
|
High Speed Switching Applications
|
Galaxy Semi-Conductor H... |
1SS401
|
111Kb/2P
|
Schottky Barrier Diode
|
Guangdong Kexin Industr... |
1SS401
|
43Kb/1P
|
HIGH SPEED SWITCHING APPLICATIONS
|
Shenzhen Jin Yu Semicon... |
1SS401
|
299Kb/2P
|
Schottoky DIODES
|
Shenzhen Luguang Electr... |
1SS401
|
257Kb/2P
|
Schottoky Diode
|
Jiangsu Changjiang Elec... |
1SS401
|
628Kb/4P
|
Schottoky Barrier Diode
|
Diode Semiconductor Kor... |
1SS401
|
192Kb/2P
|
Schottky Barrier Diode
|
Zhaoxingwei Electronics... |
1SS401
|
1Mb/2P
|
Schottky Diodes
|
Galaxy Semi-Conductor H... |
1SS401
|
131Kb/2P
|
Schottky Barrier Diode
|
|
1SS401
|
106Kb/2P
|
Schottky Barrier Diode
|
Toshiba Semiconductor |
1SS401
|
173Kb/3P
|
High Speed Switching Applications
|
|
1SS401
|
185Kb/3P
|
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
Galaxy Semi-Conductor H... |
1SS401
|
131Kb/2P
|
Schottky Barrier Diode
|
|
1SS401
|
106Kb/2P
|
Schottky Barrier Diode
|
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