제조업체 | 부품명 | 데이터시트 | 상세설명 |
Sanyo Semicon Device |
2SJ281
|
83Kb/3P
|
Very High-Speed Switching Applications
|
Search Partnumber :
Start with "2SJ281" -
Total : 113 ( 1/6 Page) |
Hitachi Semiconductor |
2SJ280
|
122Kb/8P |
SILICON P-CHANNEL MOS FET
|
2SJ280L
|
122Kb/8P |
SILICON P-CHANNEL MOS FET
|
2SJ280S
|
122Kb/8P |
SILICON P-CHANNEL MOS FET
|
Sanyo Semicon Device |
2SJ284
|
73Kb/3P |
Very High-Speed Switching Applications
|
2SJ285
|
72Kb/3P |
Very High-Speed Switching Applications
|
VBsemi Electronics Co.,... |
2SJ285
|
980Kb/7P |
P-Channel 60 V (D-S) MOSFET
|
Sanyo Semicon Device |
2SJ287
|
81Kb/3P |
Very High-Speed Switching Applications
|
Guangdong Kexin Industr... |
2SJ287
|
42Kb/1P |
P-Channel MOS Silicon FET
|
2SJ287
|
1Mb/3P |
P-Channel MOSFET
|
Sanyo Semicon Device |
2SJ288
|
82Kb/3P |
Very High-Speed Switching Applications
|
Guangdong Kexin Industr... |
2SJ288
|
42Kb/1P |
P-Channel MOS Silicon FET
|
2SJ288
|
1Mb/3P |
P-Channel MOSFET
|
Toshiba Semiconductor |
2SJ200
|
181Kb/3P |
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
2SJ200
|
426Kb/5P |
High Power Amplifier Application
|
2SJ200
|
297Kb/5P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
2SJ200
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
2SJ200-Y
|
297Kb/5P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
2SJ200
|
426Kb/5P |
High Power Amplifier Application
|
2SJ201
|
182Kb/3P |
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
|