제조업체 | 부품명 | 데이터시트 | 상세설명 |
Toshiba Semiconductor |
2SK211
|
221Kb/5P
|
N CHANNEL JUNCTION TYPE (FM TUNER, VHF BAND AMPLIFIER APPLICATIONS)
|
2SK211
|
714Kb/6P
|
Silicon N Channel Junction Type FM Tuner Applications
|
NEC |
2SK2110
|
58Kb/6P
|
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
|
Guangdong Kexin Industr... |
2SK2110
|
46Kb/1P
|
MOS Field Effect Transistor
|
Renesas Technology Corp |
2SK2110
|
302Kb/7P
|
MOS FIELD EFFECT TRANSISTOR
1996
|
Guangdong Kexin Industr... |
2SK2110-HF
|
1Mb/3P
|
N-Channel MOSFET
|
2SK2110
|
968Kb/3P
|
N-Channel MOSFET
|
NEC |
2SK2111
|
58Kb/6P
|
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
|
Guangdong Kexin Industr... |
2SK2111
|
46Kb/1P
|
MOS Field Effect Transistor
|
Renesas Technology Corp |
2SK2111
|
261Kb/8P
|
MOS FIELD EFFECT TRANSISTOR
1996
|
Guangdong Kexin Industr... |
2SK2111-HF
|
1Mb/3P
|
N-Channel MOSFET
|
2SK2111
|
692Kb/3P
|
N-Channel MOSFET
|
NEC |
2SK2112
|
59Kb/6P
|
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
|
Guangdong Kexin Industr... |
2SK2112
|
46Kb/1P
|
MOS Field Effect Transistor
|
Renesas Technology Corp |
2SK2112
|
262Kb/8P
|
MOS FIELD EFFECT TRANSISTOR
1996
|
Guangdong Kexin Industr... |
2SK2112-HF
|
1Mb/3P
|
N-Channel MOSFET
|
2SK2112
|
972Kb/3P
|
N-Channel MOSFET
|
Renesas Technology Corp |
2SK2114
|
82Kb/7P
|
Silicon N Channel MOS FET
|
Inchange Semiconductor ... |
2SK2114
|
60Kb/2P
|
Fast Switching Speed
|
2SK2115
|
60Kb/2P
|
High speed power switching
|