| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
Toshiba Semiconductor |
2SK389
|
240Kb/5P
|
N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS)
|
|
2SK389
|
69Kb/1P
|
HSTM PACKAGE SERIES
|
Fuji Electric |
2SK3891-01R
|
109Kb/4P
|
N-CHANNEL SILICON POWER MOSFET
|
Inchange Semiconductor ... |
2SK3891-01R
|
318Kb/2P
|
isc N-Channel MOSFET Transistor
|
Panasonic Battery Group |
2SK3892
|
277Kb/4P
|
Silicon N-channel power MOSFET
|
Inchange Semiconductor ... |
2SK3892
|
323Kb/2P
|
isc N-Channel MOSFET Transistor
|
NEC |
2SK3899
|
154Kb/8P
|
SWITCHING N-CHANNEL POWER MOSFET
|
Guangdong Kexin Industr... |
2SK3899
|
43Kb/1P
|
MOS Field Effect Transistor
|
Renesas Technology Corp |
2SK3899
|
287Kb/10P
|
MOS FIELD EFFECT TRANSISTOR
2004
|
|
2SK3899-ZK
|
287Kb/10P
|
MOS FIELD EFFECT TRANSISTOR
2004
|
NEC |
2SK3899-ZK
|
154Kb/8P
|
SWITCHING N-CHANNEL POWER MOSFET
|
Inchange Semiconductor ... |
2SK3899-ZK
|
401Kb/2P
|
isc N-Channel MOSFET Transistor
|
Renesas Technology Corp |
2SK3899
|
288Kb/10P
|
SWITCHING N-CHANNEL POWER MOS FET
|
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