제조업체 | 부품명 | 데이터시트 | 상세설명 |
Advanced Power Electron... |
AP0503GMA
|
60Kb/4P
|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
AP0503GMT-HF
|
99Kb/4P
|
Simple Drive Requirement, SO-8 Compatible with Heatsink
|
AP0503GMT-HF
|
99Kb/4P
|
Simple Drive Requirement
|
AP0503GMT-HF
|
52Kb/5P
|
SO-8 Compatible with Heatsink
|
AP0504GH-HF
|
99Kb/4P
|
Low On-resistance, Simple Drive Requirement
|
SHENZHEN DOINGTER SEMIC... |
AP0504GH-HF
|
564Kb/4P
|
N-Channel MOSFET uses advanced trench technology
|
Advanced Power Electron... |
AP0504GH-HF
|
99Kb/4P
|
Low On-resistance
|
AP0504GMT-HF
|
99Kb/4P
|
Simple Drive Requirement, SO-8 Compatible with Heatsink
|
VBsemi Electronics Co.,... |
AP0504GMT-HF
|
1Mb/7P
|
N-Channel 40 V (D-S) MOSFET
|
Advanced Power Electron... |
AP0504GMT-HF
|
99Kb/4P
|
Simple Drive Requirement
|
AP0504GMT-HF
|
52Kb/5P
|
SO-8 Compatible with Heatsink
|
AP05FN50I
|
55Kb/4P
|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
AP05FN50I-HF
|
56Kb/4P
|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
AP05FN50I-HF
|
56Kb/4P
|
Fast Switching Characteristic
|
AP05G120NSW-HF
|
68Kb/3P
|
High Speed Switching
|
AP05G120SW-HF
|
59Kb/3P
|
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD
|
AP05G120SW-HF
|
59Kb/3P
|
High Speed Switching
|
AP05N20GH,J-HF
|
66Kb/4P
|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
AP05N20GH-HF
|
65Kb/5P
|
Fast Switching Characteristics
|
VBsemi Electronics Co.,... |
AP05N20GH-HF
|
1Mb/10P
|
N-Channel 200 V (D-S) MOSFET
|