제조업체 | 부품명 | 데이터시트 | 상세설명 |
HuaXinAn Electronics CO... |
AP4400A
|
493Kb/12P
|
Ultra Low Power Voltage Detector
|
Asahi Kasei Microsystem... |
AP4400A
|
490Kb/12P
|
Ultra Low Power Voltage Detector
|
AP4400AEC
|
363Kb/11P
|
Ultra Low Power Voltage Detector
|
Advanced Power Electron... |
AP4405GM
|
222Kb/5P
|
Simple Drive Requirement, Lower On-resistance
|
AP4405GM
|
103Kb/4P
|
Simple Drive Requirement
|
AP4407F
|
80Kb/4P
|
P-CHANNEL ENHANCEMENT MODE
|
AP4407GM
|
72Kb/4P
|
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
VBsemi Electronics Co.,... |
AP4407GM
|
996Kb/9P
|
P-Channel 30-V (D-S) MOSFET
|
Advanced Power Electron... |
AP4407GM-HF
|
213Kb/5P
|
Simple Drive Requirement, Low On-resistance
|
VBsemi Electronics Co.,... |
AP4407GM-HF
|
996Kb/9P
|
P-Channel 30-V (D-S) MOSFET
|
SHENZHEN DOINGTER SEMIC... |
AP4407GM-HF
|
1,001Kb/5P
|
P-Channel MOSFET uses advanced trench technology
|
Advanced Power Electron... |
AP4407GM-HF
|
213Kb/5P
|
Simple Drive Requirement
|
AP4407GM-HF
|
57Kb/5P
|
Simple Drive Requirement
|
AP4407GP
|
223Kb/6P
|
Lower On-resistance, Simple Drive Requirement
|
AP4407GP-HF
|
59Kb/5P
|
Simple Drive Requirement
|
AP4407GR
|
69Kb/4P
|
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
AP4407GS
|
223Kb/6P
|
Lower On-resistance, Simple Drive Requirement
|
AP4407GS-HF
|
59Kb/5P
|
Simple Drive Requirement
|
AP4407GSP-HF
|
103Kb/4P
|
Simple Drive Requirement
|
AP4407I
|
80Kb/4P
|
P-CHANNEL ENHANCEMENT MODE
|