제조업체 | 부품명 | 데이터시트 | 상세설명 |
RF Micro Devices |
ATC100A0R2BT
|
923Kb/11P
|
280W GaN WIDEBAND PULSED POWER
|
ATC100A0R2BT
|
773Kb/11P
|
380W GaN WIDEBAND PULSED
|
NXP Semiconductors |
ATC100A0R5BT500XT
|
1Mb/17P
|
RF LDMOS Wideband Integrated Power Amplifier
Rev. 1, 3/2011
|
RF Micro Devices |
ATC100A0R7BT
|
923Kb/11P
|
280W GaN WIDEBAND PULSED POWER
|
ATC100A0R7BT
|
773Kb/11P
|
380W GaN WIDEBAND PULSED
|
Search Partnumber :
Start with "ATC100A0R" -
Total : 18 ( 1/1 Page) |
RF Micro Devices |
ATC100A0R2BT
|
923Kb/11P |
280W GaN WIDEBAND PULSED POWER
|
ATC100A0R2BT
|
773Kb/11P |
380W GaN WIDEBAND PULSED
|
NXP Semiconductors |
ATC100A0R5BT500XT
|
1Mb/17P |
RF LDMOS Wideband Integrated Power Amplifier
Rev. 1, 3/2011 |
RF Micro Devices |
ATC100A0R7BT
|
923Kb/11P |
280W GaN WIDEBAND PULSED POWER
|
ATC100A0R7BT
|
773Kb/11P |
380W GaN WIDEBAND PULSED
|
NXP Semiconductors |
ATC100A100JP150XT
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
List of Unclassifed Man... |
ATC100A100JW150XI
|
275Kb/6P |
Ultra-Stable Performance
|
ATC100A100JW150XT
|
275Kb/6P |
Ultra-Stable Performance
|
ATC100A100JW150XTV
|
275Kb/6P |
Ultra-Stable Performance
|
NXP Semiconductors |
ATC100A101JP150XT
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
RF Micro Devices |
ATC100A120JT
|
923Kb/11P |
280W GaN WIDEBAND PULSED POWER
|
ATC100A150JT
|
773Kb/11P |
380W GaN WIDEBAND PULSED
|
NXP Semiconductors |
ATC100A220GT500XT
|
1Mb/17P |
RF LDMOS Wideband Integrated Power Amplifier
Rev. 1, 3/2011 |
RF Micro Devices |
ATC100A220JT
|
923Kb/11P |
280W GaN WIDEBAND PULSED POWER
|
ATC100A220JT
|
773Kb/11P |
380W GaN WIDEBAND PULSED
|