제조업체 | 부품명 | 데이터시트 | 상세설명 |
NXP Semiconductors |
ATC100B102JP50XT
|
1Mb/25P
|
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013
|
ATC100B102JT50XT
|
761Kb/18P
|
1800–2200 MHz, 32 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR
Rev. 1, 01/2022
|
Freescale Semiconductor... |
ATC100B102JT50XT
|
868Kb/13P
|
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
|
ATC100B102JT50XT
|
748Kb/11P
|
RF Power Field Effect Transistor
|
ATC100B102JT50XT
|
1Mb/18P
|
RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
|
ATC100B102JT50XT
|
1Mb/19P
|
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
|
ATC100B102JT50XT
|
1Mb/20P
|
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
|
ATC100B102JT50XT
|
1Mb/19P
|
RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
|
ATC100B102JT50XT
|
1Mb/19P
|
RF Power Field Effect Transistors
|
NXP Semiconductors |
ATC100B102JT50XT
|
634Kb/20P
|
RF Power LDMOS Transistors
Rev. 0, 09/2018
|
ATC100B102JT50XT
|
1Mb/19P
|
RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET
Rev. 0, 7/2014
|
ATC100B102JT50XT
|
1Mb/18P
|
RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET
Rev. 0, 7/2014
|
Freescale Semiconductor... |
ATC100B102KT50XT
|
857Kb/23P
|
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
|