제조업체 | 부품명 | 데이터시트 | 상세설명 |
Shenzhen Bencent Electr... |
BS1100N-2A1
|
411Kb/4P
|
Eliminates overvoltage caused by fast rising transients
|
BS1100N-D1
|
348Kb/5P
|
Eliminates overvoltage caused by fast rising transients
|
Sharp Corporation |
BS112
|
132Kb/3P
|
WIDE WAVELENGTH BAND TYPE PHOTODIODE
|
BS115
|
90Kb/2P
|
CAN PACKAGE PHOTODIODE FOR VISIBLE LIGHT
|
Search Partnumber :
Start with "BS11" -
Total : 105 ( 1/6 Page) |
Shenzhen Bencent Electr... |
BS1100N-2A1
|
411Kb/4P |
Eliminates overvoltage caused by fast rising transients
|
BS1100N-D1
|
348Kb/5P |
Eliminates overvoltage caused by fast rising transients
|
Sharp Corporation |
BS112
|
132Kb/3P |
WIDE WAVELENGTH BAND TYPE PHOTODIODE
|
BS115
|
90Kb/2P |
CAN PACKAGE PHOTODIODE FOR VISIBLE LIGHT
|
PANDUIT CORP. |
BS10
|
79Kb/1P |
NON-INSULATED BUTT SPLICE
|
BS10-D
|
79Kb/1P |
NON-INSULATED BUTT SPLICE
|
BS10-L
|
79Kb/1P |
NON-INSULATED BUTT SPLICE
|
Baumer IVO GmbH & Co. K... |
BS100
|
85Kb/1P |
My-Com precision switches
|
Power-One |
BS1001-7R
|
147Kb/4P |
100 Watt DC-DC Converters
|
Sharp Corporation |
BS100C
|
79Kb/2P |
PHOTODIODE FOR VISIBLE LIGHT
|
BS100D
|
80Kb/2P |
Wide Wavelength Band Type Photodiode
|
Shenzhen Bencent Electr... |
BS100N-D1
|
280Kb/5P |
Thyristor Surge Suppresser
|
Motorola, Inc |
BS107
|
76Kb/4P |
TMOS Switching(N-Channel-Enhancement)
|
NXP Semiconductors |
BS107
|
65Kb/12P |
N-channel enhancement mode vertical D-MOS transistor
April 1995 |
Siemens Semiconductor G... |
BS107
|
77Kb/7P |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
|
Diodes Incorporated |
BS107
|
61Kb/2P |
N-CHANNEL ENHANCEMENT MODE TRANSISTOR
DA21804 Rev. C-3 |