제조업체 | 부품명 | 데이터시트 | 상세설명 |
Alpha & Omega Semicondu... |
DFN1.2X1.1_6L
|
64Kb/1P
|
CONTROLLING DIMENSION IS MILLIMETER
|
Global Mixed-mode Techn... |
DFN1.6X1.6-6
|
190Kb/1P
|
Package Outline
|
Diodes Incorporated |
DFN1006-2
|
776Kb/32P
|
PACKAGE OUTLINE DIMENSIONS
AP02002 Rev. 44
|
DFN1006-2
|
174Kb/12P
|
SUGGESTED PAD LAYOUT
AP02001 Rev. 38
|
Galaxy Semi-Conductor H... |
DFN1006-2
|
62Kb/1P
|
PACKAGE OUTLINE DIMENSIONS
|
Diodes Incorporated |
DFN1006-3
|
776Kb/32P
|
PACKAGE OUTLINE DIMENSIONS
AP02002 Rev. 44
|
Nexperia B.V. All right... |
DFN1006B-3
|
960Kb/12P
|
PNP resistor-equipped transistor; R1 = 100 k廓, R2 = 100 k廓
|
DFN1006B-3
|
721Kb/12P
|
NPN resistor-equipped transistor; R1 = 22 k廓, R2 = open
|
DFN1006B-3
|
755Kb/13P
|
PNP resistor-equipped transistor; R1 = 1 k廓, R2 = 1 k廓
|
DFN1006B-3
|
836Kb/13P
|
PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓
|
DFN1006B-3
|
842Kb/12P
|
PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 47 k廓
|
DFN1006B-3
|
616Kb/12P
|
PNP resistor-equipped transistor; R1 = 100 k廓, R2 = open
|
DFN1006B-3
|
628Kb/13P
|
PNP resistor-equipped transistor; R1 = 1 k廓, R2 = 10 k廓
|
DFN1006B-3
|
845Kb/12P
|
PNP resistor-equipped transistor; R1 = 10 k廓, R2 = 10 k廓
|
DFN1006B-3
|
617Kb/12P
|
PNP resistor-equipped transistor; R1 = 10 k廓, R2 = open
|
DFN1006B-3
|
842Kb/12P
|
PNP resistor-equipped transistor; R1 = 10 k廓, R2 = 47 k廓
|
Diodes Incorporated |
DFN1006H4-2
|
776Kb/32P
|
PACKAGE OUTLINE DIMENSIONS
AP02002 Rev. 44
|
DFN1006H4-2
|
174Kb/12P
|
SUGGESTED PAD LAYOUT
AP02001 Rev. 38
|
DFN1006H4-3
|
776Kb/32P
|
PACKAGE OUTLINE DIMENSIONS
AP02002 Rev. 44
|