| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
Analog Microelectronics |
DFN-10B
|
52Kb/1P
|
(3x3x0.75mm) MIN 0.700 MAX 0.800
|
|
DFN-10B
|
34Kb/1P
|
(3x3x0.75mm) Carrier Width (W) 12.0+-0.1 mm
|
Protek Devices |
DFN-2-0402
|
280Kb/5P
|
package outline & pad layout
|
Analog Microelectronics |
DFN-6D
|
33Kb/1P
|
(2x2x0.75mm) MIN 0.700 MAX 0.800
|
|
DFN-6D
|
27Kb/1P
|
(2x2x0.75mm) Carrier Width (W) 8.0+-0.1 mm
|
Unisonic Technologies |
DFN-8
|
231Kb/6P
|
1.1W AUDIO POWER AMPLIFIER WITH SHUTDOWN MODE
|
Analog Microelectronics |
DFN-8C
|
59Kb/1P
|
(3x3x0.75mm) MIN 0.700 MAX 0.800
|
|
DFN-8C
|
36Kb/1P
|
(3x3x0.75mm) Carrier Width (W) 12.0+-0.1 mm
|
Diodes Incorporated |
DFN0603H3-2
|
776Kb/32P
|
PACKAGE OUTLINE DIMENSIONS
AP02002 Rev. 44
|
Alpha & Omega Semicondu... |
DFN1.2X1.1_6L
|
64Kb/1P
|
CONTROLLING DIMENSION IS MILLIMETER
|
Global Mixed-mode Techn... |
DFN1.6X1.6-6
|
190Kb/1P
|
Package Outline
|
Diodes Incorporated |
DFN1006-2
|
776Kb/32P
|
PACKAGE OUTLINE DIMENSIONS
AP02002 Rev. 44
|
|
DFN1006-2
|
174Kb/12P
|
SUGGESTED PAD LAYOUT
AP02001 Rev. 38
|
Galaxy Semi-Conductor H... |
DFN1006-2
|
62Kb/1P
|
PACKAGE OUTLINE DIMENSIONS
|
Diodes Incorporated |
DFN1006-3
|
776Kb/32P
|
PACKAGE OUTLINE DIMENSIONS
AP02002 Rev. 44
|
Nexperia B.V. All right... |
DFN1006B-3
|
755Kb/13P
|
PNP resistor-equipped transistor; R1 = 1 k廓, R2 = 1 k廓
|
|
DFN1006B-3
|
836Kb/13P
|
PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓
|
|
DFN1006B-3
|
842Kb/12P
|
PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 47 k廓
|
|
DFN1006B-3
|
616Kb/12P
|
PNP resistor-equipped transistor; R1 = 100 k廓, R2 = open
|
|
DFN1006B-3
|
628Kb/13P
|
PNP resistor-equipped transistor; R1 = 1 k廓, R2 = 10 k廓
|
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