제조업체 | 부품명 | 데이터시트 | 상세설명 |
Carling Technologies |
GA1-B0-24-620-11-DC
|
2Mb/4P
|
Circuit Breaker
|
Microsemi Corporation |
GA100
|
202Kb/4P
|
SCRs Nuclear Radiation Resistant, Planar
|
CUI INC |
GA1006
|
238Kb/2P
|
Square frame paper cone - alnico magnet
|
CUI Devices |
GA1006
|
474Kb/3P
|
SPEAKER
08/05/2022
|
Inchange Semiconductor ... |
GA100JT12
|
540Kb/4P
|
isc N-Channel Transistor
2023-9-26
|
GeneSiC Semiconductor, ... |
GA100JT12-227
|
1Mb/12P
|
OFF Silicon Carbide Junction Transistor
|
Inchange Semiconductor ... |
GA100JT12-ISCFM8004
|
365Kb/5P
|
SiC MOSFET Power Module
2023-9-26
|
GeneSiC Semiconductor, ... |
GA100JT17-227
|
1Mb/12P
|
OFF Silicon Carbide Junction Transistor
|
Inchange Semiconductor ... |
GA100JT17-ISCFM8005
|
365Kb/5P
|
SiC MOSFET Power Module
2023-9-26
|
International Rectifier |
GA100NA60U
|
300Kb/10P
|
INSULATED GATE BIPOLAR TRANSISTOR
|
Vishay Siliconix |
GA100NA60U
|
252Kb/10P
|
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
Revision: 22-Jul-10
|
GA100NA60UP
|
252Kb/10P
|
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
Revision: 22-Jul-10
|
GeneSiC Semiconductor, ... |
GA100SBJT12-FR4
|
533Kb/6P
|
Double Pulse Test Board
|
GA100SICP12-227
|
258Kb/9P
|
Transistor/Schottky Diode Co-pack
|
GA100SICP12-227
|
1Mb/13P
|
Silicon Carbide Junction Transistor/Schottky Diode Co-pack
|
International Rectifier |
GA100TS120U
|
269Kb/10P
|
HALF-BRIDGE IGBT INT-A-PAK
|
Vishay Siliconix |
GA100TS120UPBF
|
296Kb/10P
|
"Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 100 A
Revision: 04-May-10
|
International Rectifier |
GA100TS60SF
|
112Kb/7P
|
Standard Speed IGBT
|
Vishay Siliconix |
GA100TS60SFPBF
|
133Kb/7P
|
"Half-Bridge" IGBT INT-A-PAK (Standard Speed IGBT), 100 A
Revision: 04-May-10
|
International Rectifier |
GA100TS60SQ
|
113Kb/7P
|
HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT
|