제조업체 | 부품명 | 데이터시트 | 상세설명 |
Microsemi Corporation |
GA200
|
140Kb/3P
|
SCRs Nanosecond Switching, Planar
|
Digitron Semiconductors |
GA200
|
173Kb/4P
|
SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR
|
Microsemi Corporation |
GA200A
|
140Kb/3P
|
SCRs Nanosecond Switching, Planar
|
Digitron Semiconductors |
GA200A
|
173Kb/4P
|
SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR
|
International Rectifier |
GA200HS60S
|
101Kb/6P
|
HALF-BRIDGE IGBT INT-A-PAK
|
GA200HS60S1
|
67Kb/6P
|
HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT
|
Vishay Siliconix |
GA200HS60S1PBF
|
128Kb/6P
|
"Half-Bridge" IGBT INT-A-PAK (Standard Speed IGBT), 200 A
Revision: 03-May-10
|
International Rectifier |
GA200NS61U
|
164Kb/9P
|
High Side Switch Chopper Module Ultra-Fast Speed IGBT
|
GA200SA60S
|
201Kb/8P
|
INSULATED GATE BIPOLAR TRANSISTOR
|
GA200SA60S
|
322Kb/9P
|
INSULATED GATE BIPOLAR TRANSISTOR
|
Vishay Siliconix |
GA200SA60S
|
182Kb/9P
|
Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A
Revision: 22-Jul-10
|
International Rectifier |
GA200SA60SP
|
322Kb/9P
|
INSULATED GATE BIPOLAR TRANSISTOR
|
Vishay Siliconix |
GA200SA60SP
|
182Kb/9P
|
Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A
Revision: 22-Jul-10
|
GA200SA60SP
|
181Kb/9P
|
Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A
02-Oct-12
|
GA200SA60SP
|
181Kb/9P
|
Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A
02-Oct-12
|
International Rectifier |
GA200SA60U
|
197Kb/8P
|
INSULATED GATE BIPOLAR TRANSISTOR
|
Vishay Siliconix |
GA200SA60UP
|
153Kb/8P
|
Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A
Revision: 26-Oct-11
|
International Rectifier |
GA200TD120U
|
299Kb/10P
|
HALF-BRIDGE IGBT DOUBLE INT-A-PAK
|
GA200TS60U
|
303Kb/10P
|
HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT
|
Vishay Siliconix |
GA200TS60UPBF
|
239Kb/9P
|
"Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A
Revision: 04-May-10
|