제조업체 | 부품명 | 데이터시트 | 상세설명 |
NXP Semiconductors |
GQM2195C2E100FB12D
|
346Kb/9P
|
RF Power GaN Transistor
Rev. 1, 01/2021
|
GQM2195C2E100FB12D
|
805Kb/23P
|
N--Channel Enhancement--Mode Lateral MOSFET
Rev. 2, 10/2021
|
GQM2195C2E100JB12
|
414Kb/18P
|
1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR
Rev. 1, 08/2020
|
GQM2195C2E120FB12D
|
346Kb/9P
|
RF Power GaN Transistor
Rev. 1, 01/2021
|
GQM2195C2E150JB12
|
414Kb/18P
|
1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR
Rev. 1, 08/2020
|
Murata Manufacturing Co... |
GQM2195C2E180JB12
|
758Kb/27P
|
High Q and High Power Chip Multilayer Ceramic Capacitors for General Purpose
|
NXP Semiconductors |
GQM2195C2E180JB12D
|
385Kb/17P
|
RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET
Rev. 1, 11/2022
|
GQM2195C2E1R0BB12D
|
379Kb/9P
|
RF Power GaN Transistor
|
Murata Manufacturing Co... |
GQM2195C2E1R2BB12
|
753Kb/27P
|
High Q and High Power Chip Multilayer Ceramic Capacitors for General Purpose
|
NXP Semiconductors |
GQM2195C2E1R2BB12D
|
379Kb/9P
|
RF Power GaN Transistor
|
GQM2195C2E1R3BB12
|
414Kb/18P
|
1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR
Rev. 1, 08/2020
|
GQM2195C2E1R5BB12D
|
379Kb/9P
|
RF Power GaN Transistor
|
GQM2195C2E1R6BB12D
|
379Kb/9P
|
RF Power GaN Transistor
|