제조업체 | 부품명 | 데이터시트 | 상세설명 |
Toshiba Semiconductor |
GT50J102
|
254Kb/5P
|
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
GT50J102
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
Search Partnumber :
Start with "GT50J102" -
Total : 25 ( 1/2 Page) |
Toshiba Semiconductor |
GT50J101
|
835Kb/16P |
Discrete IGBTs
|
GT50J121
|
317Kb/6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
GT50J121
|
190Kb/6P |
Silicon N Channel IGBT High Power Switching Applications
|
GT50J121
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
GT50J121
|
190Kb/6P |
Silicon N Channel IGBT High Power Switching Applications
|
GT50J122
|
160Kb/6P |
Current Resonance Inverter Switching Application
|
GT50J123
|
220Kb/10P |
Discrete IGBTs Silicon N-Channel IGBT
|
GT50J301
|
282Kb/5P |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
GT50J301
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
GT50J322
|
254Kb/5P |
N CHANNEL MOS TYPE (THE 4TH CENERATION CURRENT RESONACE INVERTER SWITHCING APPLICATIONS)
|
GT50J322
|
614Kb/6P |
SILICON N CHANNEL IGBT FOURTH GENERATION IGBT
|
GT50J322
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
GT50J322H
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
GT50J322
|
614Kb/6P |
SILICON N CHANNEL IGBT FOURTH GENERATION IGBT
|
GT50J325
|
170Kb/7P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
GT50J325
|
198Kb/7P |
Silicon N Channel IGBT High Power Switching Applications
|
GT50J325
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
GT50J325
|
198Kb/7P |
Silicon N Channel IGBT High Power Switching Applications
|