GT60M303 데이터시트, PDF

제조업체

제조업체	부품명	데이터시트	상세설명
Toshiba Semiconductor	GT60M303	426Kb/6P	INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
	GT60M303	420Kb/6P	HIGH POWER SWITCHING APPLICATIONS
	GT60M303	1Mb/73P	Bipolar Small-Signal Transistors
	GT60M303-Q	420Kb/6P	HIGH POWER SWITCHING APPLICATIONS
	GT60M303A	835Kb/16P	Discrete IGBTs
Search Partnumber : Start with "GT60M303" - Total : 15 ( 1/1 Page)
Toshiba Semiconductor	GT60M303-Q	420Kb/6P	HIGH POWER SWITCHING APPLICATIONS
	GT60M303A	835Kb/16P	Discrete IGBTs
	GT60M301	292Kb/5P	N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS)
	GT60M301	835Kb/16P	Discrete IGBTs
	GT60M302	275Kb/5P	N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS)
	GT60M302	835Kb/16P	Discrete IGBTs
	GT60M305	835Kb/16P	Discrete IGBTs
	GT60M322	835Kb/16P	Discrete IGBTs
	GT60M322	191Kb/6P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT60M323	193Kb/6P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT60M323	168Kb/6P	Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
	GT60M323	1Mb/73P	Bipolar Small-Signal Transistors
	GT60M323	168Kb/6P	Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
	GT60M324	188Kb/6P	Consumer Application Voltage Resonance Inverter Switching Application
	GT60M324	1Mb/73P	Bipolar Small-Signal Transistors

GT60M303 판매업체

판매업체	부품명	제조업체	상세설명	Price	Qty. BuyNow