제조업체 | 부품명 | 데이터시트 | 상세설명 |
Toshiba Semiconductor |
GT60M303
|
426Kb/6P
|
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
GT60M303
|
420Kb/6P
|
HIGH POWER SWITCHING APPLICATIONS
|
GT60M303
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
GT60M303-Q
|
420Kb/6P
|
HIGH POWER SWITCHING APPLICATIONS
|
GT60M303A
|
835Kb/16P
|
Discrete IGBTs
|
Search Partnumber :
Start with "GT60M303" -
Total : 15 ( 1/1 Page) |
Toshiba Semiconductor |
GT60M303-Q
|
420Kb/6P |
HIGH POWER SWITCHING APPLICATIONS
|
GT60M303A
|
835Kb/16P |
Discrete IGBTs
|
GT60M301
|
292Kb/5P |
N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS)
|
GT60M301
|
835Kb/16P |
Discrete IGBTs
|
GT60M302
|
275Kb/5P |
N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS)
|
GT60M302
|
835Kb/16P |
Discrete IGBTs
|
GT60M305
|
835Kb/16P |
Discrete IGBTs
|
GT60M322
|
835Kb/16P |
Discrete IGBTs
|
GT60M322
|
191Kb/6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
GT60M323
|
193Kb/6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
GT60M323
|
168Kb/6P |
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
|
GT60M323
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
GT60M323
|
168Kb/6P |
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
|
GT60M324
|
188Kb/6P |
Consumer Application Voltage Resonance Inverter Switching Application
|
GT60M324
|
1Mb/73P |
Bipolar Small-Signal Transistors
|