제조업체 | 부품명 | 데이터시트 | 상세설명 |
Toshiba Semiconductor |
HN2E01F
|
506Kb/7P
|
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
HN2E01F
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
HN2E01F
|
506Kb/7P
|
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
HN2E02F
|
281Kb/6P
|
Super High Speed Switching Application
|
HN2E02F
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
HN2E04F
|
523Kb/8P
|
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
HN2E04F
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
HN2E04F
|
335Kb/8P
|
TOSHIBA MULTI CHIP DISCRETE DEVICE
|
HN2E05J
|
250Kb/6P
|
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
HN2E05J
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|