| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
Rectron Semiconductor |
HVM10
|
224Kb/2P
|
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes)
|
Dc Components |
HVM10
|
389Kb/2P
|
TECHNICAL SPECIFICATIONS OF HIGH VOLTAGE ASSEMBLIED RECTIFIER
|
Leshan Radio Company |
HVM10
|
51Kb/2P
|
HIGH-VOLTAGE DIODES
|
MIC GROUP RECTIFIERS |
HVM10
|
87Kb/2P
|
HIGH VOLTAGE SILICON RECTIFIER
|
Chongqing Pingwei Enter... |
HVM10
|
40Kb/1P
|
HIGH VOLTAGE ASSEMBLIED RECTIFIER
|
Leshan Radio Company |
HVM10
|
284Kb/8P
|
Controlled avalanche characteristic combined Low forward voltage drop
|
SUNMATE electronic Co.,... |
HVM10
|
45Kb/1P
|
0.35A Axial Leaded High Voltage Rectifier
|
Shanghai Leiditech Elec... |
HVM10
|
506Kb/8P
|
Controlled avalanche characteristic combined
|
MIC GROUP RECTIFIERS |
HVM12
|
87Kb/2P
|
HIGH VOLTAGE SILICON RECTIFIER
|
Chongqing Pingwei Enter... |
HVM12
|
40Kb/1P
|
HIGH VOLTAGE ASSEMBLIED RECTIFIER
|
Shenzhen Luguang Electr... |
HVM12
|
399Kb/3P
|
General Purpose High Voltage Diodes
|
Leshan Radio Company |
HVM12
|
284Kb/8P
|
Controlled avalanche characteristic combined Low forward voltage drop
|
SUNMATE electronic Co.,... |
HVM12
|
45Kb/1P
|
0.35A Axial Leaded High Voltage Rectifier
|
Shanghai Leiditech Elec... |
HVM12
|
506Kb/8P
|
Controlled avalanche characteristic combined
|
DONGGUAN YOU FENG WEI E... |
HVM12
|
401Kb/2P
|
High voltage silicon diodes
|
Rectron Semiconductor |
HVM12
|
224Kb/2P
|
HIGH VOLTAGE ASSEMBLIED RECTIFIER (VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes)
|
Dc Components |
HVM12
|
389Kb/2P
|
TECHNICAL SPECIFICATIONS OF HIGH VOLTAGE ASSEMBLIED RECTIFIER
|
Leshan Radio Company |
HVM12
|
51Kb/2P
|
HIGH-VOLTAGE DIODES
|
GETAI ELECTRONICS DEVIC... |
HVM12-350
|
499Kb/2P
|
High Voltage Silicon Rectifiers Diodes
|
|
HVM12-350
|
506Kb/2P
|
High Voltage Rectifier Diode
|
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