제조업체 | 부품명 | 데이터시트 | 상세설명 |
Infineon Technologies A... |
IPB026N06N
|
1,021Kb/2P
|
New OptiMOS??40V and 60V
07 / 2012
|
IPB026N06N
|
606Kb/9P
|
OptiMOSTM Power-Transistor
Rev.2.2 2012-12-20
|
Inchange Semiconductor ... |
IPB026N06N
|
243Kb/2P
|
isc N-Channel MOSFET Transistor
|
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Total : 41 ( 1/3 Page) |
Infineon Technologies A... |
IPB026N10NF2S
|
960Kb/11P |
StrongIRFETTM 2 Power-Transistor
Rev. 2.0, 2022-09-23 |
IPB020N04NG
|
522Kb/9P |
OptiMOS3 Power-Transistor
2010-05-19 revision:1.3 |
IPB020N08N5
|
1Mb/12P |
N-channel, normal level
Rev.2.0,2014-12-17 |
IPB020N10N5
|
1Mb/12P |
N-channel, normal level
Rev.2.1,2014-05-05 |
Inchange Semiconductor ... |
IPB020N10N5
|
316Kb/2P |
isc N-Channel MOSFET Transistor
|
Infineon Technologies A... |
IPB020N10N5LF
|
1,017Kb/11P |
OptiMOSTM 5 Linear FET, 100 V
Rev.2.1,2017-02-16 |
Inchange Semiconductor ... |
IPB020N10N5LF
|
244Kb/2P |
Isc N-Channel MOSFET Transistor
|
Infineon Technologies A... |
IPB020NE7N3G
|
267Kb/9P |
OptiMOSTM3 Power-Transistor
Rev. 2.2 2009-11-16 |
IPB021N06N3
|
483Kb/11P |
OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.
Rev. 2.2 2009-12-11 |
IPB021N06N3-G
|
483Kb/11P |
OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.
Rev. 2.2 2009-12-11 |
IPB021N06N3G
|
483Kb/11P |
OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.
Rev. 2.2 2009-12-11 |
IPB022N04LG
|
686Kb/10P |
OptiMOS3 Power-Transistor
Rev. 1.2 2009-12-11 |
IPB022N12NM6
|
1Mb/11P |
MOSFET OptiMOSTM 6 Power-Transistor, 120 V
Rev. 2.0, 2023-10-12 |
Inchange Semiconductor ... |
IPB023N04N
|
244Kb/2P |
isc N-Channel MOSFET Transistor
|
Infineon Technologies A... |
IPB023N04NF2S
|
1Mb/11P |
StrongIRFETTM2 Power-Transistor
Rev. 2.0, 2022-10-11 |
IPB023N04NG
|
246Kb/10P |
OptiMOS?? Power-Transistor
Rev. 1.2 2009-12-11 |
IPB023N06N3G
|
271Kb/9P |
OptiMOS?? Power-Transistor
Rev. 2.2 2009-12-11 |