제조업체 | 부품명 | 데이터시트 | 상세설명 |
International Rectifier |
IRG4BC30F
|
167Kb/8P
|
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
|
IRG4BC30F
|
98Kb/35P
|
Fit Rate / Equivalent Device Hours
|
IRG4BC30F
|
177Kb/9P
|
INSULATED GATE BIPOLAR TRANSISTOR
|
IRG4BC30F-STRLP
|
177Kb/9P
|
INSULATED GATE BIPOLAR TRANSISTOR
|
IRG4BC30FD
|
412Kb/10P
|
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
|
IRG4BC30FD
|
98Kb/35P
|
Fit Rate / Equivalent Device Hours
|
IRG4BC30FD-S
|
1Mb/11P
|
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
IRG4BC30FD-SPBF
|
1Mb/12P
|
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
IRG4BC30FD-SPBF
|
1Mb/11P
|
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
IRG4BC30FD-SPBF
|
1Mb/11P
|
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
IRG4BC30FD1
|
361Kb/10P
|
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
IRG4BC30FD1PBF
|
421Kb/11P
|
Fast CoPack IGBT
|
IRG4BC30FD1PBF
|
415Kb/10P
|
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
IRG4BC30FD1PBF
|
415Kb/10P
|
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
IRG4BC30FDPBF
|
3Mb/11P
|
Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A )
|
IRG4BC30FDPBF
|
397Kb/10P
|
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRG4BC30FDPBF
|
397Kb/10P
|
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRG4BC30FPBF
|
218Kb/8P
|
Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR
|
IRG4BC30FPBF
|
311Kb/8P
|
INSULATED GATE BIPOLAR TRANSISTOR
|
IRG4BC30FPBF
|
311Kb/8P
|
INSULATED GATE BIPOLAR TRANSISTOR
|