제조업체 | 부품명 | 데이터시트 | 상세설명 |
Samsung semiconductor |
KMM5364103CK
|
286Kb/17P
|
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V
|
KMM5364103CKG
|
286Kb/17P
|
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V
|
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Start with "KMM5364103CK" -
Total : 15 ( 1/1 Page) |
Samsung semiconductor |
KMM5364103CKG
|
286Kb/17P |
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V
|
KMM5364105CK
|
277Kb/15P |
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V
|
KMM5364105CKG
|
277Kb/15P |
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V
|
KMM5364003BSW
|
351Kb/18P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
KMM5364003BSWG
|
351Kb/18P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
KMM5364003CK
|
286Kb/17P |
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V
|
KMM5364003CKG
|
286Kb/17P |
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V
|
KMM5364003CSW
|
391Kb/20P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
KMM5364003CSWG
|
391Kb/20P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
KMM5364005BSW
|
393Kb/19P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
KMM5364005BSWG
|
393Kb/19P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
KMM5364005CK
|
277Kb/15P |
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V
|
KMM5364005CKG
|
277Kb/15P |
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V
|
KMM5364005CSW
|
415Kb/21P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
KMM5364005CSWG
|
415Kb/21P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|