제조업체 | 부품명 | 데이터시트 | 상세설명 |
Samsung semiconductor |
KMM5368003BSW
|
365Kb/18P
|
8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
KMM5368003BSWG
|
365Kb/18P
|
8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
Search Partnumber :
Start with "KMM5368" -
Total : 42 ( 1/3 Page) |
Samsung semiconductor |
KMM5368003BSW
|
365Kb/18P |
8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
KMM5368003BSWG
|
365Kb/18P |
8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
KMM5361203C2W
|
280Kb/17P |
1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh
|
KMM5361203C2WG
|
280Kb/17P |
1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh
|
KMM5361205C2W
|
289Kb/17P |
1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|
KMM5361205C2WG
|
289Kb/17P |
1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|
KMM53616000BK
|
371Kb/18P |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
KMM53616000BKG
|
371Kb/18P |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
KMM53616000CK
|
410Kb/20P |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
KMM53616000CKG
|
410Kb/20P |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
KMM53616004BK
|
415Kb/19P |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
KMM53616004BKG
|
415Kb/19P |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
KMM53616004CK
|
453Kb/21P |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
KMM53616004CKG
|
453Kb/21P |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
KMM5362203C2W
|
284Kb/17P |
2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V
|
KMM5362203C2WG
|
284Kb/17P |
2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V
|
KMM5362205C2W
|
296Kb/17P |
2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|
KMM5362205C2WG
|
296Kb/17P |
2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|