제조업체 | 부품명 | 데이터시트 | 상세설명 |
STMicroelectronics |
M5913
|
220Kb/17P
|
COMBINED SINGLE CHIP PCM CODEC AND FILTER
|
M5913B1
|
220Kb/17P
|
COMBINED SINGLE CHIP PCM CODEC AND FILTER
|
Shenzhen Huazhimei Semi... |
M5918B
|
941Kb/12P
|
1.2A charging 1 A discharging Highly integrated mobile power SOC
|
Renesas Technology Corp |
M59330P
|
219Kb/11P
|
LAN Transceiver
|
M59350FP
|
111Kb/9P
|
Watchdog Timer IC with Built-in 5 V Constant-Voltage Power Supply
|
STMicroelectronics |
M59BW102
|
181Kb/24P
|
1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
|
M59BW10225N1T
|
181Kb/24P
|
1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
|
M59BW102N
|
181Kb/24P
|
1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
|
M59DR008
|
267Kb/37P
|
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
|
M59DR008E
|
267Kb/37P
|
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
|
M59DR008E100N1T
|
267Kb/37P
|
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
|
M59DR008E100N6T
|
267Kb/37P
|
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
|
M59DR008E100ZB1T
|
267Kb/37P
|
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
|
M59DR008E100ZB6T
|
267Kb/37P
|
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
|
M59DR008E120N1T
|
267Kb/37P
|
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
|
M59DR008E120N6T
|
267Kb/37P
|
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
|
M59DR008E120ZB1T
|
267Kb/37P
|
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
|
M59DR008E120ZB6T
|
267Kb/37P
|
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
|
M59DR008EN
|
267Kb/37P
|
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
|
M59DR008EZB
|
267Kb/37P
|
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
|