| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
Micro Electronics |
MG61D
|
57Kb/1P
|
SOLID STATE INDICATORS ARE ENCAPSULATED IN RECTANGULAR EPOXY PACKAGE
|
| Search Partnumber :
Start with "MG61" -
Total : 75 ( 1/4 Page) |
Micro Electronics |
MG61D
|
57Kb/1P |
SOLID STATE INDICATORS ARE ENCAPSULATED IN RECTANGULAR EPOXY PACKAGE
|
Willow Technologies Ltd |
MG60
|
307Kb/1P |
Film Resistors
|
Riedon Powertron |
MG60
|
241Kb/1P |
Film Resistors
|
Toshiba Semiconductor |
MG600
|
319Kb/6P |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
|
MG600J1US51
|
319Kb/6P |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
|
MG600J2YS60A
|
191Kb/9P |
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Powerex Power Semicondu... |
MG600J2YS61A
|
322Kb/6P |
Dual IGBTMOD
|
Mitsubishi Electric Sem... |
MG600J2YS61A
|
219Kb/13P |
High Power Switching Applications Motor Control Applications
|
Toshiba Semiconductor |
MG600Q1US41
|
288Kb/6P |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
|
MG600Q1US51
|
305Kb/6P |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
Mitsubishi Electric Sem... |
MG600Q1US59A
|
123Kb/7P |
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
|
Toshiba Semiconductor |
MG600Q1US61
|
234Kb/8P |
TOSHIBA IGBT Module Silicon N Channel IGBT
|
|
MG600Q2YMS3
|
574Kb/10P |
High-Power Module Silicon Carbide N-Channel MOSFET
2022-02-25 Rev.4.0 |
|
MG600Q2YS60A
|
319Kb/8P |
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
|
Mitsubishi Electric Sem... |
MG600Q2YS60A
|
139Kb/9P |
High Power Switching Applications Motor Control Applications
|
Powerex Power Semicondu... |
MG600Q2YS60A
|
418Kb/6P |
Compact IGBT
|
MicroPower Direct, LLC |
MG600RU
|
462Kb/2P |
Compact, 6W 4:1 Input, MiniDIP DC/DC Con vert ers
|
|
MG624D-12RU
|
462Kb/2P |
Compact, 6W 4:1 Input, MiniDIP DC/DC Con vert ers
|
|
MG624D-15RU
|
462Kb/2P |
Compact, 6W 4:1 Input, MiniDIP DC/DC Con vert ers
|
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