제조업체 | 부품명 | 데이터시트 | 상세설명 |
IXYS Corporation |
MMIX1F420N10T
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232Kb/7P
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N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
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Start with "MMIX1F420N10T" -
Total : 25 ( 1/2 Page) |
IXYS Corporation |
MMIX1F40N110P
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184Kb/6P |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
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MMIX1F44N100Q3
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2Mb/2P |
1000V Q3-Class HiPerFET??Power MOSFET In SMPD Technology
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MMIX1F132N50P3
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230Kb/7P |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
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MMIX1F160N30T
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230Kb/7P |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
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MMIX1F180N25T
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230Kb/7P |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
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MMIX1F230N20T
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231Kb/7P |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
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MMIX1F360N15T2
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240Kb/7P |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
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MMIX1F520N075T2
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221Kb/6P |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
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MMIX1B15N300C
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254Kb/7P |
High Voltage, High Frequency, BiMOSFET Monolithic Bipolar MOS Transistor
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MMIX1B20N300C
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256Kb/7P |
High Voltage, High Frequency, BiMOSFET Monolithic Bipolar MOS Transistor
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MMIX1G120N120A3V1
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253Kb/7P |
Ultra-Low-Vsat PT IGBT for 3kHz Switching
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MMIX1G320N60B3
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250Kb/7P |
Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching
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MMIX1G75N250
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233Kb/6P |
For Capacitor Discharge Applications ( Electrically Isolated Tab)
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MMIX1H60N150V1
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207Kb/5P |
1500V MOS Gated Thyristor w/ Anti-Parallel Diode
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MMIX1T132N50P3
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273Kb/7P |
N-Channel Enhancement Mode Avalanche Rated
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MMIX1T550N055T2
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156Kb/3P |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
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MMIX1T600N04T2
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235Kb/6P |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
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MMIX1T660N04T4
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229Kb/6P |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
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MMIX1X100N60B3H1
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305Kb/8P |
Extreme Light Punch Through IGBT for 10-30kHz Switching
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