| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
California Eastern Labs |
NE3512S02
|
270Kb/8P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
Renesas Technology Corp |
NE3512S02
|
200Kb/11P
|
C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs |
NE3512S02-T1C
|
270Kb/8P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
Renesas Technology Corp |
NE3512S02-T1C
|
200Kb/11P
|
C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs |
NE3512S02-T1C-A
|
270Kb/8P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
|
NE3512S02-T1D
|
270Kb/8P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
Renesas Technology Corp |
NE3512S02-T1D
|
200Kb/11P
|
C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs |
NE3512S02-T1D-A
|
270Kb/8P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
| Search Partnumber :
Start with "NE3512S02" -
Total : 6 ( 1/1 Page) |
California Eastern Labs |
NE3512S02-T1C
|
270Kb/8P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
Renesas Technology Corp |
NE3512S02-T1C
|
200Kb/11P |
C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs |
NE3512S02-T1C-A
|
270Kb/8P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
|
NE3512S02-T1D
|
270Kb/8P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
Renesas Technology Corp |
NE3512S02-T1D
|
200Kb/11P |
C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs |
NE3512S02-T1D-A
|
270Kb/8P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
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