제조업체 | 부품명 | 데이터시트 | 상세설명 |
NEC |
NE41137
|
208Kb/2P
|
N-CHANNEL GAASDUAL-GATE MESFET
|
NE416
|
579Kb/13P
|
NPN MEDIUM POWER UHF-VHF TRANSISTOR
|
NE4210M01
|
79Kb/12P
|
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
Renesas Technology Corp |
NE4210M01
|
193Kb/14P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1998
|
NEC |
NE4210M01-T1
|
79Kb/12P
|
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
Renesas Technology Corp |
NE4210M01-T1
|
193Kb/14P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1998
|
NEC |
NE4210S01
|
65Kb/16P
|
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs |
NE4210S01
|
252Kb/7P
|
SUPER LOW NOISE HJ FET
|
Renesas Technology Corp |
NE4210S01
|
199Kb/18P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1999
|
NE4210S01-T1
|
199Kb/18P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1999
|
NEC |
NE4210S01-T1
|
65Kb/16P
|
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs |
NE4210S01-T1
|
252Kb/7P
|
SUPER LOW NOISE HJ FET
|
NEC |
NE4210S01-T1B
|
65Kb/16P
|
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs |
NE4210S01-T1B
|
252Kb/7P
|
SUPER LOW NOISE HJ FET
|
Renesas Technology Corp |
NE4210S01-T1B
|
199Kb/18P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1999
|
NE4211M01
|
206Kb/10P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
2003
|
NE4211M01-T1
|
206Kb/10P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
2003
|
NEC |
NE42484A
|
72Kb/2P
|
NONLINEAR MODEL
|
Renesas Technology Corp |
NE42484A
|
189Kb/12P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1991
|
NE42484A-SL
|
189Kb/12P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1991
|