제조업체 | 부품명 | 데이터시트 | 상세설명 |
NEC |
NE661M04
|
70Kb/7P
|
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
|
California Eastern Labs |
NE661M04
|
188Kb/10P
|
NPN SILICON HIGH FREQUENCY TRANSISTOR
|
NEC |
NE661M04-T2
|
70Kb/7P
|
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
|
California Eastern Labs |
NE661M04-T2-A
|
188Kb/10P
|
NPN SILICON HIGH FREQUENCY TRANSISTOR
|
NE661M04-T2-A
|
227Kb/10P
|
NPN SILICON HIGH FREQUENCY TRANSISTOR
|
Renesas Technology Corp |
NE661M05
|
301Kb/15P
|
NPN SILICON RF TRANSISTOR
2003
|
NE661M05-T1
|
301Kb/15P
|
NPN SILICON RF TRANSISTOR
2003
|
California Eastern Labs |
NE661M4
|
227Kb/10P
|
NPN SILICON HIGH FREQUENCY TRANSISTOR
|
NE66219
|
329Kb/6P
|
NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
|
NE66219-A
|
329Kb/6P
|
NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
|
NE66219-T1
|
329Kb/6P
|
NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
|
NE66219-T1-A
|
329Kb/6P
|
NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
|
Renesas Technology Corp |
NE662M03
|
229Kb/12P
|
NPN SILICON RF TRANSISTOR
2003
|
NE662M03-T1
|
229Kb/12P
|
NPN SILICON RF TRANSISTOR
2003
|
NEC |
NE662M04
|
93Kb/10P
|
NPN SILICON HIGH FREQUENCY TRANSISTOR
|
California Eastern Labs |
NE662M04
|
420Kb/11P
|
NPN SILICON HIGH FREQUENCY TRANSISTOR
|
NEC |
NE662M04-T2
|
93Kb/10P
|
NPN SILICON HIGH FREQUENCY TRANSISTOR
|
California Eastern Labs |
NE662M04-T2
|
420Kb/11P
|
NPN SILICON HIGH FREQUENCY TRANSISTOR
|
NE662M04-T2-A
|
420Kb/11P
|
NPN SILICON HIGH FREQUENCY TRANSISTOR
|
NEC |
NE662M16
|
63Kb/9P
|
NPN SILICON HIGH FREQUENCY TRANSISTOR
|