제조업체 | 부품명 | 데이터시트 | 상세설명 |
NEC |
NESG210719
|
114Kb/3P
|
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
Renesas Technology Corp |
NESG210719
|
124Kb/10P
|
NPN SiGe RF Transistor for Low Noise, High-Gain
|
California Eastern Labs |
NESG210719
|
1Mb/9P
|
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
|
Renesas Technology Corp |
NESG210719-A
|
124Kb/10P
|
NPN SiGe RF Transistor for Low Noise, High-Gain
|
California Eastern Labs |
NESG210719-A
|
1Mb/9P
|
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
|
NEC |
NESG210719-T1
|
114Kb/3P
|
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
Renesas Technology Corp |
NESG210719-T1
|
124Kb/10P
|
NPN SiGe RF Transistor for Low Noise, High-Gain
|
California Eastern Labs |
NESG210719-T1
|
1Mb/9P
|
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
|
Renesas Technology Corp |
NESG210719-T1-A
|
124Kb/10P
|
NPN SiGe RF Transistor for Low Noise, High-Gain
|
California Eastern Labs |
NESG210719-T1-A
|
1Mb/9P
|
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
|