제조업체 | 부품명 | 데이터시트 | 상세설명 |
ON Semiconductor |
NTH4301
|
57Kb/6P
|
HD3e Quad N-Channel
January, 2003 - Rev. 0
|
NTH4302
|
57Kb/6P
|
HD3e Quad N-Channel
January, 2003 - Rev. 0
|
NTH4L013N120M3S
|
368Kb/8P
|
Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200V, M3S, TO-247-4L
October, 2023 -Rev. 0
|
NTH4L014N120M3P
|
329Kb/8P
|
Silicon Carbide SiC MOSFET - 14mohm, 1200V, M3, TO247-4L
August, 2022 - Rev. 2
|
NTH4L015N065SC1
|
337Kb/9P
|
MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 12 m, 142 A
April, 2021 ??Rev. 1
|
NTH4L015N065SC1
|
357Kb/8P
|
Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L
May, 2022 - Rev. 2
|
NTH4L015N065SC1
|
356Kb/8P
|
Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L
January, 2023 - Rev. 3
|
NTH4L015N065SC1
|
357Kb/8P
|
Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L
May, 2022 - Rev. 2
|
NTH4L015N065SC1
|
356Kb/8P
|
Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L
January, 2023 - Rev. 3
|
NTH4L020N090SC1
|
331Kb/8P
|
Silicon Carbide SiC MOSFET - 20 mohm, 900 V, M2, TO-247-4L
May, 2022 - Rev. 1
|
NTH4L020N120SC1
|
362Kb/8P
|
Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L
May, 2022 - Rev. 4
|
NTH4L020N120SC1
|
362Kb/8P
|
Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-4L
January, 2023 - Rev. 5
|
NTH4L020N120SC1
|
283Kb/8P
|
MOSFET ??SiC Power, Single N-Channel, TO247-4L 1200 V, 20 m, 102 A
April, 2020 ??Rev. 2
|
NTH4L020N120SC1
|
362Kb/8P
|
Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L
May, 2022 - Rev. 4
|
NTH4L020N120SC1
|
362Kb/8P
|
Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-4L
January, 2023 - Rev. 5
|
NTH4L022N120M3S
|
261Kb/9P
|
MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 22 m, 68 A
October, 2021 ??Rev. 1
|
NTH4L022N120M3S
|
314Kb/8P
|
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200V, M3, TO-247-4L
January, 2023 - Rev. 4
|
NTH4L022N120M3S
|
314Kb/8P
|
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200V, M3, TO-247-4L
January, 2023 - Rev. 4
|
NTH4L025N065SC1
|
322Kb/8P
|
Silicon Carbide SiC MOSFET - 19 mohm, 650 V, M2, TO-247-4L
May, 2022 - Rev. 2
|
NTH4L027N65S3F
|
532Kb/10P
|
MOSFET ??Power, N-Channel, SUPERFET III, FRFET 650 V, 75 A, 27.4 m
November, 2019 ??Rev. 2
|