제조업체 | 부품명 | 데이터시트 | 상세설명 |
NXP Semiconductors |
PDTC123YK
|
79Kb/11P
|
NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 10 k-ohm
Rev. 03-24 March 2005
|
PDTC123YK
|
145Kb/11P
|
NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓
Rev. 04-16 November 2009
|
Nexperia B.V. All right... |
PDTC123YK
|
237Kb/19P
|
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
Rev. 04 - 3 September 2009
|
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Start with "PDTC123YK" -
Total : 118 ( 1/6 Page) |
NXP Semiconductors |
PDTC123YE
|
79Kb/11P |
NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 10 k-ohm
Rev. 03-24 March 2005 |
PDTC123YE
|
145Kb/11P |
NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓
Rev. 04-16 November 2009 |
Nexperia B.V. All right... |
PDTC123YE
|
237Kb/19P |
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
Rev. 04 - 3 September 2009 |
NXP Semiconductors |
PDTC123YM
|
79Kb/11P |
NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 10 k-ohm
Rev. 03-24 March 2005 |
PDTC123YM
|
145Kb/11P |
NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓
Rev. 04-16 November 2009 |
Nexperia B.V. All right... |
PDTC123YM
|
237Kb/19P |
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
Rev. 04 - 3 September 2009 |
PDTC123YMB
|
749Kb/12P |
NPN resistor-equipped transistor; R1 = 2.2 k廓, R2 = 10 k廓
|
NXP Semiconductors |
PDTC123YS
|
79Kb/11P |
NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 10 k-ohm
Rev. 03-24 March 2005 |
PDTC123YS
|
145Kb/11P |
NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓
Rev. 04-16 November 2009 |
Nexperia B.V. All right... |
PDTC123YS
|
237Kb/19P |
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
Rev. 04 - 3 September 2009 |
NXP Semiconductors |
PDTC123YT
|
948Kb/12P |
Low VCEsat (BISS) transistors
May 2006 |
PDTC123YT
|
79Kb/11P |
NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 10 k-ohm
Rev. 03-24 March 2005 |
PDTC123YT
|
145Kb/11P |
NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓
Rev. 04-16 November 2009 |
Nexperia B.V. All right... |
PDTC123YT
|
237Kb/19P |
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
Rev. 04 - 3 September 2009 |
NXP Semiconductors |
PDTC123YU
|
948Kb/12P |
Low VCEsat (BISS) transistors
May 2006 |
PDTC123YU
|
79Kb/11P |
NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 10 k-ohm
Rev. 03-24 March 2005 |
PDTC123YU
|
145Kb/11P |
NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓
Rev. 04-16 November 2009 |