제조업체 | 부품명 | 데이터시트 | 상세설명 |
OSRAM GmbH |
Q65110A2741
|
164Kb/10P
|
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor
|
Q65110A2742
|
167Kb/11P
|
GaAlAs-IR-Lumineszenzdiode (880 nm) und gr체ne GaP-LED (565 nm)
|
Search Partnumber :
Start with "Q65110A274" -
Total : 93 ( 1/5 Page) |
OSRAM GmbH |
Q65110A2741
|
164Kb/10P |
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor
|
Q65110A2742
|
167Kb/11P |
GaAlAs-IR-Lumineszenzdiode (880 nm) und gr체ne GaP-LED (565 nm)
|
Q65110A2700
|
160Kb/9P |
Silicon PIN Photodiode with Daylight Blocking Filter Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.0
|
Q65110A2701
|
139Kb/8P |
Silizium-PIN-Fotodiode in SMT und als Reverse Gullwing
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Q65110A2701
|
924Kb/18P |
Rain Sensors
|
Q65110A2728
|
491Kb/15P |
Lead (Pb) Free Product - RoHS Compliant
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Q65110A2730
|
568Kb/21P |
Coupling into Light Guides
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Q65110A2739
|
491Kb/15P |
Lead (Pb) Free Product - RoHS Compliant
|
Q65110A2037
|
443Kb/19P |
Coupling into light guides
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Q65110A2043
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430Kb/19P |
Automotive Interior Lighting
|
Q65110A2055
|
501Kb/20P |
Information Displays
|
Q65110A2067
|
472Kb/19P |
Optical Indicator
|
ams AG |
Q65110A2091
|
1Mb/16P |
High Power Infrared Emitter (850 nm)
Version 1.8 2022-08-08 |
OSRAM GmbH |
Q65110A2091
|
144Kb/8P |
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung
|
Q65110A2120
|
435Kb/15P |
Nicht f체r Neuentwicklungen Not for new designs
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Q65110A2132
|
442Kb/19P |
Optical Indicator
|
Q65110A2148
|
477Kb/19P |
Optical Indicator
|
Q65110A2149
|
477Kb/19P |
Optical Indicator
|