제조업체 | 부품명 | 데이터시트 | 상세설명 |
Mitsubishi Electric Sem... |
RM400DG-66S
|
79Kb/4P
|
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
RM400DG-90F
|
171Kb/5P
|
HIGH POWER SWITCHING USE INSULATED
|
Powerex Power Semicondu... |
RM400DY-24S
|
803Kb/4P
|
Super Fast Recovery Dual Diode Module 400 Amperes/1200 Volts
|
RM400DY-66S
|
40Kb/2P
|
HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Sem... |
RM400DY-66S
|
35Kb/3P
|
HIGH POWER SWITCHING USE INSULATED TYPE
|
RM400DY-66S
|
66Kb/4P
|
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
RM400DY-66S
|
66Kb/4P
|
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
RM400HA-20S
|
48Kb/3P
|
HIGH SPEED SWITCHING USE INSULATED TYPE
|
RM400HA-24S
|
48Kb/3P
|
HIGH SPEED SWITCHING USE INSULATED TYPE
|
Powerex Power Semicondu... |
RM400HA-24S
|
70Kb/4P
|
Super Fast Recovery Single Diode Module (400 Amperes/1200 Volts)
|
RM400HA-34S
|
80Kb/4P
|
Super Fast Recovery Single Diode Module (400 Amperes/1700 Volts)
|
Mitsubishi Electric Sem... |
RM400HV-34S
|
69Kb/3P
|
HIGH SPEED SWITCHING USE INSULATED TYPE
|
Rectron Semiconductor |
RM40N100LD
|
325Kb/7P
|
N-Channel Enhancement Mode Power MOSFET
|
RM40P07
|
236Kb/7P
|
NCE P-Channel Enhancement Mode Power MOSFET
|
RM40P40LD
|
288Kb/7P
|
P-Channel Enhancement Mode Power MOSFET
|