| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
STMicroelectronics |
STD12NE06
|
107Kb/10P
|
N - CHANNEL 60V - 0.08ohm - 12A - IPAK/DPAK SINGLE FEATURE SIZE POWER MOSFET
|
|
STD12NE06L
|
92Kb/9P
|
N - CHANNEL 60V - 0.09ohm- 12A TO-251/TO-252 STripFET POWER MOSFET
|
VBsemi Electronics Co.,... |
STD12NE06L-1
|
963Kb/7P
|
N-Channel 60 V (D-S) MOSFET
|
|
STD12NE06LT4
|
1,006Kb/8P
|
N-Channel 60 V (D-S) MOSFET
|
| Search Partnumber :
Start with "STD12NE06" -
Total : 47 ( 1/3 Page) |
STMicroelectronics |
STD12NE06L
|
92Kb/9P |
N - CHANNEL 60V - 0.09ohm- 12A TO-251/TO-252 STripFET POWER MOSFET
|
VBsemi Electronics Co.,... |
STD12NE06L-1
|
963Kb/7P |
N-Channel 60 V (D-S) MOSFET
|
|
STD12NE06LT4
|
1,006Kb/8P |
N-Channel 60 V (D-S) MOSFET
|
STMicroelectronics |
STD12N05
|
177Kb/10P |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
|
|
STD12N05L
|
176Kb/10P |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
|
|
STD12N06
|
177Kb/10P |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
|
|
STD12N06L
|
176Kb/10P |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
|
VBsemi Electronics Co.,... |
STD12N06T4
|
1,004Kb/8P |
N-Channel 60 V (D-S) MOSFET
|
STMicroelectronics |
STD12N10L
|
45Kb/6P |
N - CHANNEL 100V - 0.12 ohm - 12A TO-252 LOW THRESHOLD POWER MOS TRANSISTOR
|
VBsemi Electronics Co.,... |
STD12N10L
|
1,010Kb/7P |
N-Channel 100 V (D-S) MOSFET
|
|
STD12N10T4G
|
1,010Kb/7P |
N-Channel 100 V (D-S) MOSFET
|
STMicroelectronics |
STD12N50DM2
|
817Kb/16P |
Fast-recovery body diode
March 2016 Rev 2 |
|
STD12N50M2
|
754Kb/16P |
Zener-protected
December 2014 Rev 4 |
|
STD12N60DM2AG
|
559Kb/15P |
Automotive-grade N-channel 600 V, 380 m typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package
November 2019 Rev 4 |
|
STD12N60DM6
|
326Kb/15P |
N-channel 600 V, 345 m廓 typ., 10 A MDmesh DM6 Power MOSFET in a DPAK package
Rev 1 - October 2020 |
|
STD12N60M2
|
590Kb/19P |
N-channel 600 V, 0.395 Ω typ., 9 A MDmesh M2 Power MOSFET in a DPAK package
DS10854 - Rev 2 - April 2019 |
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