| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
STMicroelectronics |
STG200G65FD8AG
|
505Kb/11P
|
Automotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 packing
Rev 1 - July 2023
|
|
STG200M65F2D8AG
|
292Kb/11P
|
Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing
May 2021 Rev 4
|
SamHop Microelectronics... |
STG2017
|
651Kb/7P
|
Dual N-Channel E nhancement Mode Field Effect Transistor
|
|
STG2454
|
123Kb/7P
|
Super high dense cell design for low RDS(ON).
|
|
STG2507
|
649Kb/7P
|
Dual P-Channel E nhancement Mode Field Effect Transistor
|
STMicroelectronics |
STG25H120F2D7
|
252Kb/10P
|
1200 V, 25 A trench gate field-stop H series IGBT die in D7 packing
May 2015 Rev 1
|
| Search Partnumber :
Start with "STG2" -
Total : 100 ( 1/5 Page) |
STMicroelectronics |
STG200G65FD8AG
|
505Kb/11P |
Automotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 packing
Rev 1 - July 2023 |
|
STG200M65F2D8AG
|
292Kb/11P |
Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing
May 2021 Rev 4 |
SamHop Microelectronics... |
STG2017
|
651Kb/7P |
Dual N-Channel E nhancement Mode Field Effect Transistor
|
|
STG2454
|
123Kb/7P |
Super high dense cell design for low RDS(ON).
|
|
STG2507
|
649Kb/7P |
Dual P-Channel E nhancement Mode Field Effect Transistor
|
STMicroelectronics |
STG25H120F2D7
|
252Kb/10P |
1200 V, 25 A trench gate field-stop H series IGBT die in D7 packing
May 2015 Rev 1 |
Advantech Co., Ltd. |
STG-UDM001HA-HAE
|
336Kb/1P |
Advantech Industrial USB DOM Industrial bNAND USB DOM
|
|
STG-UDM002HA-HAE
|
336Kb/1P |
Advantech Industrial USB DOM Industrial bNAND USB DOM
|
Seoul Semiconductor |
STG0A12CE
|
869Kb/25P |
Applicable for automotive interior light
|
|
STG0A12CE
|
865Kb/24P |
Applicable for automotive interior light
|
|
STG0A2PD
|
779Kb/19P |
Mid-Power LED -3528 Series
|
STMicroelectronics |
STG1218
|
1Mb/29P |
Dual supply, quad SPDT switch, 1.8 V and 3.3 V logic input compatible
December 2021 Rev 3 |
|
STG15M120F3D7
|
263Kb/10P |
Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing
Rev 3 - August 2022 |
|
STG15M120F3D8
|
224Kb/8P |
1200 V, 15 A trench gate field‑stop M series low‑loss IGBT die in D8 packing
Rev 1 - January 2022 |
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