| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
Tycon Systems, Inc. |
STL12
|
228Kb/2P
|
600W Outdoor UPS Systems
|
STMicroelectronics |
STL120N10F8
|
633Kb/15P
|
N‑channel enhancement mode standard level 100 V, 4.6 mΩ max., 125 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
Rev 2 - January 2023
|
|
STL120N2VH5
|
655Kb/18P
|
N-channel 20 V, 0.002, 28 A STripFET V Power MOSFET in PowerFLAT 5x6 package
|
|
STL120N4F6AG
|
971Kb/15P
|
Wettable flank package
March 2017 Rev 4
|
|
STL120N4LF6AG
|
935Kb/14P
|
High avalanche ruggedness
September 2015 Rev 1
|
|
STL120N8F7
|
780Kb/14P
|
High avalanche ruggedness
|
|
STL120NH02V
|
239Kb/10P
|
N-channel 20V - 0.0025ohm - 120A - PowerFLAT(6x5) STripFETIII Power MOSFET
|
|
STL128D
|
631Kb/12P
|
Low spread of dynamic parameters
June 2011 Rev 1
|
|
STL128DFP
|
631Kb/12P
|
Low spread of dynamic parameters
June 2011 Rev 1
|
|
STL128DN
|
425Kb/14P
|
High voltage fast-switching NPN power transistor
|
|
STL128DNFP
|
425Kb/14P
|
High voltage fast-switching NPN power transistor
|
|
STL12N10F7
|
587Kb/13P
|
N-channel 100 V, 11.3 mΩ typ., 12 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package
DS12044 - Rev 2 - June 2018
|
|
STL12N3LLH5
|
453Kb/11P
|
N-channel 30 V, 0.0079 廓, 12 A, PowerFLAT??(3.3 x 3.3) STripFET??V Power MOSFET
June 2011 Rev 1
|
|
STL12N60M2
|
474Kb/15P
|
N-channel 600 V, 0.400 廓 typ., 6.5 A MDmesh??M2 Power MOSFET in a PowerFLAT 5x6 HV package
May 2015 Rev 1
|
|
STL12N60M6
|
798Kb/15P
|
N-channel 600 V, 390 m typ., 6.4 A MDmeshTM M6 Power MOSFET in a PowerFLAT™ 5x6 HV package
January 2019 Rev 1
|
|
STL12N65M2
|
472Kb/15P
|
Zener-protected
May 2015 Rev 1
|
|
STL12N65M5
|
1Mb/17P
|
Very low intrinsic capacitance
July 2013 Rev 4
|
|
STL12P6F6
|
601Kb/13P
|
P-channel 60 V, 0.13 typ., 3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 package
|
Shanghai Leiditech Elec... |
STL12P6F6
|
2Mb/5P
|
-100V P-Channel Enhancement Mode MOSFET
Rev : 01.09.2021
|
Superworld Electronics |
STL12S03F
|
146Kb/2P
|
2W Single Output Surface
|
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