제조업체 | 부품명 | 데이터시트 | 상세설명 |
Toshiba Semiconductor |
TC58NVG5D2ELA48
|
579Kb/65P
|
32 GBIT (4G × 8 BIT) CMOS NAND E2 PROM (Multi-Level-Cell)
2008-07-18C
|
TC58NVG5H2HTA00
|
2Mb/20P
|
Flash Memory
Mar. 2016
|
TC58NVG5H2HTAI0
|
2Mb/20P
|
Flash Memory
Mar. 2016
|
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Start with "TC58NVG5" -
Total : 68 ( 1/4 Page) |
Toshiba Semiconductor |
TC58NVG5D2ELA48
|
579Kb/65P |
32 GBIT (4G × 8 BIT) CMOS NAND E2 PROM (Multi-Level-Cell)
2008-07-18C |
TC58NVG5H2HTA00
|
2Mb/20P |
Flash Memory
Mar. 2016 |
TC58NVG5H2HTAI0
|
2Mb/20P |
Flash Memory
Mar. 2016 |
TC58NVG0S3AFT05
|
559Kb/33P |
1 GBIT (128M 횞 8 BITS) CMOS NAND EEPROM
|
TC58NVG0S3ETA00
|
486Kb/65P |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TC58NVG0S3HBAI4
|
868Kb/2P |
SLC NAND & BENAND Reliability and Performance
|
KIOXIA Corporation |
TC58NVG0S3HBAI4
|
456Kb/52P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor |
TC58NVG0S3HBAI4
|
67Kb/3P |
NAND Flash Memory(SLC Middle Capacity)
|
TC58NVG0S3HBAI4
|
2Mb/20P |
Flash Memory
Mar. 2016 |
TC58NVG0S3HBAI6
|
868Kb/2P |
SLC NAND & BENAND Reliability and Performance
|
TC58NVG0S3HBAI6
|
2Mb/20P |
Flash Memory
Mar. 2016 |
TC58NVG0S3HBAI6
|
67Kb/3P |
NAND Flash Memory(SLC Middle Capacity)
|
KIOXIA Corporation |
TC58NVG0S3HBAI6
|
499Kb/52P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor |
TC58NVG0S3HTA00
|
868Kb/2P |
SLC NAND & BENAND Reliability and Performance
|
TC58NVG0S3HTA00
|
2Mb/20P |
Flash Memory
Mar. 2016 |
KIOXIA Corporation |
TC58NVG0S3HTA00
|
448Kb/52P |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor |
TC58NVG0S3HTA00
|
67Kb/3P |
NAND Flash Memory(SLC Middle Capacity)
|