| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
Renesas Technology Corp |
UPA502CT
|
161Kb/8P
|
N-CHANNEL MOSFET FOR SWITCHING
|
NEC |
UPA502T
|
62Kb/6P
|
N-CHANNEL MOS FET 5-PIN 2 CIRCUITS
|
Renesas Technology Corp |
UPA502T
|
177Kb/8P
|
MOS FIELD EFFECT TRANSISTOR
1995
|
|
UPA503CT
|
197Kb/8P
|
P-CHANNEL MOSFET FOR SWITCHING
|
|
UPA503CT-T1-A
|
197Kb/8P
|
P-CHANNEL MOSFET FOR SWITCHING
|
|
UPA503CT-T1-AT
|
197Kb/8P
|
P-CHANNEL MOSFET FOR SWITCHING
|
NEC |
UPA503T
|
60Kb/6P
|
P-CHANNEL MOSFET (5-PIN 2 CIRCUITS)
|
Renesas Technology Corp |
UPA503T
|
176Kb/8P
|
MOS FIELD EFFECT TRANSISTOR
1996
|
NEC |
UPA505T
|
88Kb/9P
|
N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS
|
Renesas Technology Corp |
UPA505T
|
196Kb/11P
|
MOS FIELD EFFECT TRANSISTOR
1996
|
|
UPA506T
|
665Kb/9P
|
SILICON TRANSISTOR
1995
|
NEC |
UPA507TE
|
146Kb/8P
|
P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING
|
Renesas Technology Corp |
UPA507TE
|
370Kb/10P
|
MOS FET WITH SCHOTTKY BARRIER DIODE
2003
|
|
UPA507TE-T1-A
|
370Kb/10P
|
MOS FET WITH SCHOTTKY BARRIER DIODE
2003
|
|
UPA507TE-T1-AT
|
370Kb/10P
|
MOS FET WITH SCHOTTKY BARRIER DIODE
2003
|
|
UPA507TE-T2-A
|
370Kb/10P
|
MOS FET WITH SCHOTTKY BARRIER DIODE
2003
|
|
UPA507TE-T2-AT
|
370Kb/10P
|
MOS FET WITH SCHOTTKY BARRIER DIODE
2003
|
NEC |
UPA508TE
|
144Kb/8P
|
N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING
|
Renesas Technology Corp |
UPA508TE
|
382Kb/10P
|
MOS FET WITH SCHOTTKY BARRIER DIODE
2003
|
|
UPA509TA
|
485Kb/9P
|
NPN EPITAXIAL SILICON TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR HIGH FREQUENCY AMPLIFIER, AM HIGH FREQUENCY AUDIO FREQUENCY AMPLIFIER APPLICATION
2005
|
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