제조업체 | 부품명 | 데이터시트 | 상세설명 |
California Eastern Labs |
UPG2253T6S
|
557Kb/11P
|
RF FRONT-END IC FOR BluetoothTM CLASS 1
|
Renesas Technology Corp |
UPG2253T6S
|
258Kb/14P
|
GaAs HJ-FET INTEGRATED CIRCUIT
2009
|
California Eastern Labs |
UPG2253T6S-E2
|
557Kb/11P
|
RF FRONT-END IC FOR BluetoothTM CLASS 1
|
Renesas Technology Corp |
UPG2253T6S-E2
|
258Kb/14P
|
GaAs HJ-FET INTEGRATED CIRCUIT
2009
|
California Eastern Labs |
UPG2253T6S-E2-A
|
557Kb/11P
|
RF FRONT-END IC FOR BluetoothTM CLASS 1
|
Renesas Technology Corp |
UPG2253T6S-E2-A
|
258Kb/14P
|
GaAs HJ-FET INTEGRATED CIRCUIT
2009
|
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Renesas Technology Corp |
UPG2253T6S-E2
|
258Kb/14P |
GaAs HJ-FET INTEGRATED CIRCUIT
2009 |
California Eastern Labs |
UPG2253T6S-E2
|
557Kb/11P |
RF FRONT-END IC FOR BluetoothTM CLASS 1
|
UPG2253T6S-E2-A
|
557Kb/11P |
RF FRONT-END IC FOR BluetoothTM CLASS 1
|
Renesas Technology Corp |
UPG2253T6S-E2-A
|
258Kb/14P |
GaAs HJ-FET INTEGRATED CIRCUIT
2009 |
California Eastern Labs |
UPG2250T5N
|
313Kb/12P |
1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1
|
Renesas Technology Corp |
UPG2250T5N
|
261Kb/13P |
GaAs INTEGRATED CIRCUIT
2008 |
UPG2250T5N-E2
|
261Kb/13P |
GaAs INTEGRATED CIRCUIT
2008 |
California Eastern Labs |
UPG2250T5N-E2
|
313Kb/12P |
1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1
|
Renesas Technology Corp |
UPG2250T5N-E2-A
|
261Kb/13P |
GaAs INTEGRATED CIRCUIT
2008 |
California Eastern Labs |
UPG2250T5N-E2-A
|
313Kb/12P |
1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1
|
Renesas Technology Corp |
UPG2251T6M
|
246Kb/12P |
GaAs INTEGRATED CIRCUIT
2009 |
UPG2251T6M-E2
|
246Kb/12P |
GaAs INTEGRATED CIRCUIT
2009 |
UPG2251T6M-E2-A
|
246Kb/12P |
GaAs INTEGRATED CIRCUIT
2009 |
UPG2255T6N
|
255Kb/13P |
GaAs HJ-FET INTEGRATED CIRCUIT
2009 |