| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
Vishay Siliconix |
V10K100C
|
135Kb/5P
|
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.44 V at IF = 2.5 A
Revision: 01-Aug-2019
|
|
V10K100DU
|
136Kb/5P
|
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A
Revision: 01-Aug-2018
|
|
V10K100DU
|
137Kb/5P
|
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier
01-Jan-2022
|
|
V10K100DU
|
137Kb/5P
|
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier
01-Jan-2022
|
|
V10K120C
|
135Kb/5P
|
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.51 V at IF = 2.5 A
Revision: 01-Aug-2019
|
|
V10K150C
|
135Kb/5P
|
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.56 V at IF = 2.5 A
Revision: 18-Sep-2019
|
|
V10K60C
|
135Kb/5P
|
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.35 V at IF = 2.5 A
Revision: 01-Aug-2019
|
|
V10K60C-M3/H
|
135Kb/5P
|
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.35 V at IF = 2.5 A
Revision: 01-Aug-2019
|
|
V10K60C-M3/I
|
135Kb/5P
|
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.35 V at IF = 2.5 A
Revision: 01-Aug-2019
|
|
V10K60CHM3/H
|
135Kb/5P
|
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.35 V at IF = 2.5 A
Revision: 01-Aug-2019
|
|
V10K60CHM3/I
|
135Kb/5P
|
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.35 V at IF = 2.5 A
Revision: 01-Aug-2019
|
|
V10K60DU
|
136Kb/5P
|
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A
Revision: 26-Jul-2018
|
|
V10K60DU
|
137Kb/5P
|
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier
01-Jan-2022
|
|
V10K60DU
|
137Kb/5P
|
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier
01-Jan-2022
|
|
V10KL45C
|
135Kb/5P
|
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.29 V at IF = 2.5 A
Revision: 01-Aug-2019
|
|
V10KL45DU
|
137Kb/5P
|
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 2.5 A
Revision: 27-Jul-2018
|
|
V10KL45DU
|
138Kb/5P
|
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier
01-Jan-2022
|
|
V10KL45DU
|
138Kb/5P
|
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier
01-Jan-2022
|
|
V10KM100C
|
135Kb/5P
|
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.46 V at IF = 2.5 A
Revision: 05-Aug-2019
|
|
V10KM120C
|
135Kb/5P
|
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.52 V at IF = 2.5 A
Revision: 18-Sep-2019
|
Korean ▼ 
English
Chinese
German
Japanese
Russian
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand