제조업체 | 부품명 | 데이터시트 | 상세설명 |
Vishay Siliconix |
VB10150S-E3/8W
|
166Kb/5P
|
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A
Revision: 19-May-08
|
VB10150S-E3/8W
|
168Kb/5P
|
High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 24-Jun-09
|
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Total : 6 ( 1/1 Page) |
Vishay Siliconix |
VB10150S-E3/4W
|
166Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A
Revision: 19-May-08 |
VB10150S-E3/4W
|
168Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 24-Jun-09 |
VB10150S-M3
|
86Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5.0 A
Revision: 30-Aug-13 |
VB10150S-M3
|
102Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier
01-Jan-2022 |
VB10150S-M3
|
77Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 30-Aug-13 |
VB10150S-M3
|
102Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier
01-Jan-2022 |