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Vishay Siliconix |
VB20120SG-E3/4W
|
166Kb/5P
|
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
Revision: 19-May-08
|
VB20120SG-E3/4W
|
162Kb/5P
|
High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 24-Jun-09
|
Search Partnumber :
Start with "VB20120SG-E3/4W" -
Total : 7 ( 1/1 Page) |
Vishay Siliconix |
VB20120SG-E3/8W
|
166Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
Revision: 19-May-08 |
VB20120SG-E3/8W
|
162Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 24-Jun-09 |
VB20120SG-E3-4W
|
160Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 24-Jun-09 |
VB20120SG-E3-8W
|
160Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 24-Jun-09 |
VB20120SG-M3
|
88Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
Revision: 14-May-13 |
VB20120SG-M3
|
101Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier
01-Jan-2022 |
VB20120SG-M3
|
101Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier
01-Jan-2022 |