제조업체 | 부품명 | 데이터시트 | 상세설명 |
VBsemi Electronics Co.,... |
VB2120
|
698Kb/9P
|
P-Channel 12-V (D-S) MOSFET
|
Search Partnumber :
Start with "VB212" -
Total : 112 ( 1/6 Page) |
VBsemi Electronics Co.,... |
VB2120
|
698Kb/9P |
P-Channel 12-V (D-S) MOSFET
|
VB2101K
|
923Kb/8P |
P-Channel 100-V (D-S) MOSFET
|
VB2101K
|
895Kb/8P |
P-Channel 100-V (D-S) MOSFET
|
VB2101K
|
895Kb/8P |
P-Channel 100-V (D-S) MOSFET
|
VB2103K
|
927Kb/8P |
P-Channel 100-V (D-S) MOSFET
|
VB2103K
|
845Kb/8P |
P-Channel 100-V (D-S) MOSFET
|
VB2103K
|
845Kb/8P |
P-Channel 100-V (D-S) MOSFET
|
VB2140
|
713Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
VB2140
|
709Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
VB2140
|
709Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
Vishay Siliconix |
VB20100C
|
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
Revision: 31-Jul-08 |
VB20100C
|
161Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 24-Jun-09 |
VB20100C
|
164Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
Revision: 16-Aug-13 |
VB20100C
|
151Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 14-Aug-13 |
VB20100C
|
104Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
01-Jan-2022 |
VB20100C-E3
|
167Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
Revision: 13-Dec-16 |
VB20100C-E3
|
214Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
01-Jan-2022 |
VB20100C-E3-4W
|
161Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 24-Jun-09 |
VB20100C-E3-8W
|
161Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Revision: 24-Jun-09 |